
Description
Experience long-lasting fast performance of PCIe® 4.0. The in-house controller's smart heat control delivers supreme power efficiency while maintaining speed and performance to help keep you on the top of your game.
PCIe 4.0 speed maximised
Huge speed boost. Up to 40% and 55% faster random read/write speeds than 980 PRO - up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near max performance of PCIe® 4.0. Fly high in gaming, video and 3D editing, data analysis, and more.
Incredible power efficiency
More power-efficient performance. Higher performance usually consumes more power. But, 990 PRO uses less power with over 50% improved performance per Watt over 980 PRO³.This low-power design delivers outstanding PCIe® 4.0 performance possible with optimal power efficiency.
Smart thermal solution
Speed beyond the heat. The nickel-coated controller and cutting-edge thermal control algorithm helps to manage heat for stable performance.The heat spreader label controls NAND chip heat, while Dynamic Thermal Guard keeps temperatures stable.
The champion maker
An amazing gameplay experience. Huge improvement in random performance enables faster loads for gaming realism on PS5 and DirectStorage PC games.
Samsung Magician software
Harness the full power of 990 PRO. Samsung Magician software's user-friendly suite of optimization tools always gets you the best performance out of your Samsung SSD. Protect data, get updates, monitor drive health, and set up LED color combinations. It's your personal SSD toolkit.
World's No.1 Flash Memory
Experience superior performance and reliability you only get from the world's No.1 flash memory seller since 2003. All components and firmware are produced in-house, including Samsung's world-renowned DRAM and NAND, for integrated start-to-finish quality you can trust.
Hard drive | |
---|---|
PCI Express interface data lanes | x4 |
SSD capacity | 4 TB |
Memory type | V-NAND MLC |
Data transmission | |
Read speed | 7450 MB/s |
Write speed | 6900 MB/s |
Random write (4KB) | 1550000 IOPS |
Random read (4KB) | 1400000 IOPS |
Security | |
Security algorithms | 256-bit AES |
Endurance | |
Mean time between failures (MTBF) | 1500000 h |
Performance | |
Interface | PCI Express 4.0 |
Component for | PC |
NVMe | Yes |
NVMe version | 2.0 |
DevSlp (device sleep) support | Yes |
PCI Express interface data lanes | x4 |
SSD capacity | 4 TB |
Security algorithms | 256-bit AES |
S.M.A.R.T. support | Yes |
Read speed | 7450 MB/s |
TRIM support | Yes |
Write speed | 6900 MB/s |
Memory type | V-NAND MLC |
Random write (4KB) | 1550000 IOPS |
Random read (4KB) | 1400000 IOPS |
Mean time between failures (MTBF) | 1500000 h |
Hardware encryption | Yes |
Design | |
Component for | PC |
Protection features | Heat resistant |
SSD form factor | M.2 |
Features | |
Interface | PCI Express 4.0 |
Component for | PC |
NVMe | Yes |
NVMe version | 2.0 |
DevSlp (device sleep) support | Yes |
PCI Express interface data lanes | x4 |
SSD capacity | 4 TB |
Security algorithms | 256-bit AES |
S.M.A.R.T. support | Yes |
Read speed | 7450 MB/s |
TRIM support | Yes |
Write speed | 6900 MB/s |
Protection features | Heat resistant |
Memory type | V-NAND MLC |
Random write (4KB) | 1550000 IOPS |
Random read (4KB) | 1400000 IOPS |
Mean time between failures (MTBF) | 1500000 h |
Hardware encryption | Yes |
SSD form factor | M.2 |
Power | |
Power consumption (average) | 5.5 W |
Operating voltage | 3.3 V |
Operational conditions | |
Operating temperature (T-T) | 0 - 70 °C |
Operating shock | 1500 G |
Technical details | |
Interface | PCI Express 4.0 |
S.M.A.R.T. support | Yes |
Operating temperature (T-T) | 0 - 70 °C |
TRIM support | Yes |
Protection features | Heat resistant |
Operating shock | 1500 G |
Hardware encryption | Yes |
SSD form factor | M.2 |
Weight & dimensions | |
Width | 80 mm |
Weight | 9 g |
Height | 22 mm |
Depth | 2.3 mm |
Specifications
UNSPSC Code
43201830
Brand
Samsung
Categories
Data Tapes, Drives & Storage
Category
Internal Solid State Drives