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Samsung 990 PRO M.2 1000 GB PCI Express 4.0 V-NAND MLC NVMe

MZ-V9P1T0BW

Samsung 990 PRO M.2 1000 GB PCI Express 4.0 V-NAND MLC NVMe

Product Code: MZ-V9P1T0BW

Description

Samsung 990 PRO. SSD capacity: 1000 GB, SSD form factor: M.2, Read speed: 7450 MB/s, Write speed: 6900 MB/s, Component for: PC
Hard drive
PCI Express interface data lanesx4
SSD capacity1000 GB
Memory typeV-NAND MLC
Data transmission
Read speed7450 MB/s
Write speed6900 MB/s
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Performance
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
PCI Express interface data lanesx4
SSD capacity1000 GB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
Design
Component forPC
SSD form factorM.2
Features
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
PCI Express interface data lanesx4
SSD capacity1000 GB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
External DDR cacheYes
External DDR cache quantity1024 MB
Power
Power consumption (average)5.4 W
Power consumption (max)7.8 W
Operating voltage3.3 V
Operational conditions
Operating temperature (T-T)0 - 70 °C
Operating vibration1500 G
Maximum operating temperature70 °C
Technical details
InterfacePCI Express 4.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Operating vibration1500 G
Hardware encryptionYes
SSD form factorM.2
Weight & dimensions
Package typeBox
Width80 mm
Weight9 g
Height22 mm
Depth2.3 mm
Packaging data
Package typeBox
UNSPSC Code

43201830

Brand

Samsung

Categories

Data Tapes, Drives & Storage

Category

Internal Solid State Drives

Component for

PC

Interface

PCI Express 4.0

Memory Type

V-NAND MLC

SSD capacity

800GB to 1000GB

SSD form factor

M.2

Starting from
€143.49 Pack of 1
/
incl. VAT €176.49
- +
Compare
Order in the next
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Samsung 990 PRO M.2 1000 GB PCI Express 4.0 V-NAND MLC NVMe

MZ-V9P1T0BW

Samsung 990 PRO M.2 1000 GB PCI Express 4.0 V-NAND MLC NVMe

Product Code: MZ-V9P1T0BW
Starting from
€143.49 Pack of 1
/
incl. VAT €176.49
- +
Compare
Order in the next
Get delivery by see exceptions*
Need more delivery information? Chat

Description

Samsung 990 PRO. SSD capacity: 1000 GB, SSD form factor: M.2, Read speed: 7450 MB/s, Write speed: 6900 MB/s, Component for: PC
Hard drive
PCI Express interface data lanesx4
SSD capacity1000 GB
Memory typeV-NAND MLC
Data transmission
Read speed7450 MB/s
Write speed6900 MB/s
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Performance
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
PCI Express interface data lanesx4
SSD capacity1000 GB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
Design
Component forPC
SSD form factorM.2
Features
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
PCI Express interface data lanesx4
SSD capacity1000 GB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
External DDR cacheYes
External DDR cache quantity1024 MB
Power
Power consumption (average)5.4 W
Power consumption (max)7.8 W
Operating voltage3.3 V
Operational conditions
Operating temperature (T-T)0 - 70 °C
Operating vibration1500 G
Maximum operating temperature70 °C
Technical details
InterfacePCI Express 4.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Operating vibration1500 G
Hardware encryptionYes
SSD form factorM.2
Weight & dimensions
Package typeBox
Width80 mm
Weight9 g
Height22 mm
Depth2.3 mm
Packaging data
Package typeBox
UNSPSC Code

43201830

Brand

Samsung

Categories

Data Tapes, Drives & Storage

Category

Internal Solid State Drives

Component for

PC

Interface

PCI Express 4.0

Memory Type

V-NAND MLC

SSD capacity

800GB to 1000GB

SSD form factor

M.2

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